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We have investigated the characteristics of etching processes involved in the fabrication of the stack-type DRAM capacitor. The 4000-A high Ru electrode and the SiO 2 hard mask with a critical dimension of 0.15 kHz were employed. The Ru etch rate and the Ru to SiO 2 mask etch selectivity increased by increasing pressure, total gas flow rate, and by addition of Cl 2 gas. We...
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