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Resistive Switching Memory
In article number 2213064, Hui Joon Park, Jong Hwan Ko, Daeho Lee, and co‐workers demonstrate analog resistive switching memory (RSM) with unprecedentedly high reliability and robustness by laser‐assisted photo‐thermochemical process. This is compatible with back‐end‐of‐line process and flexible format. With its superior characteristics, practical adaptive learning rule...
Reversible metal‐filamentary mechanism has been widely investigated to design an analog resistive switching memory (RSM) for neuromorphic hardware‐implementation. However, uncontrollable filament‐formation, inducing its reliability issues, has been a fundamental challenge. Here, an analog RSM with 3D ion transport channels that can provide unprecedentedly high reliability and robustness is demonstrated...
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