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Abstract. We investigated the corrugations induced by subsurface donor and acceptor atoms in low-temperature STM images of the (110) surface of doped GaAs single crystals. When the impurities are screened by Friedel charge-density oscillations, the height distribution for Si and Te donors exhibits an oscillatory behavior with four maxima being observable. We argue that these maxima do not correspond...
We have used alow-temperature scanning tunneling microscope (STM) to study the surface of heavily doped semiconductor InAs crystals. The crystals are cleaved in situ along the (110) plane. Apart from atomically flat areas, we also observe two major types of atomic-scale defects which can be identified as S dopant atoms and As vacancies, respectively. The strong bias voltage dependence of the STM image...
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