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The read disturb is one of the most important issues in TLC NAND Flash memories since their usage model is predominantly based on read-intensive applications. The state-of-the-art testing and qualification of the memories against this issue is performed by uniformly stressing the memory blocks with same amount of reads. However, by analyzing several workloads, it appears that the read operations are...
The continuous request for higher storage density in Solid State Drives (SSD) is pushing the NAND-Flash technology to their reliability and performance limits. Among many memories technology candidates to replace them the Resistive RAM (RRAM) concept seems to emerge. However, before designing an entire SSD based on RRAM memory devices it must be performed a design space exploration of the disk features...
The reliability of the non-volatile NAND flash memories, measured in terms of Raw Bit Error Rate (RBER), is reaching critical levels for traditional error detection and correction. Therefore, to ensure data trustworthiness in nowadays NAND flash-based Solid State Drives, it becomes essential exploiting powerful correction algorithms such as the Low Density Parity Check (LDPC). However, the burdens...
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