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The reliability and performance characterization of each non-volatile memory technology requires the thorough investigation of dedicated array test structures that mimic the real operations of a fully functional integrated product. This makes no exception also for emerging non-volatile memories like the Resistive Random Access Memory (RRAM) concept. An extensive electrical characterization activity...
The design and the manufacturing of ReRAM test structures allow deeper insight in the performance of the FORM-ING, RESET, and SET operations at array level, providing details on the process induced variability of the technology, and on the potential sources of failures. Test structures allow also demonstrating the integration capability of the ReRAM technology using a CMOS-compatible process ramping...
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