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InN/GaN heterostructure was fabricated via reactive low energetic Nitrogen ion (LENI at 300 eV) bombardment at lower substrate temperature (350 °C). X-Ray Photoemission spectroscopic (XPS) and Atomic Force Microscopic (AFM) measurements were performed to analyse the electronic structure, surface chemistry, band alignment, and the morphology of the grown heterostructure. XPS analysis revealed the evolution...
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