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A study of the Schottky barrier height (SBH) and the ideality factor n was made using results of the temperature dependence of the experimental forward and reverse bias current-voltage (I-V) characteristics of Ag/n-GaAs MIS diodes. The diodes were fabricated on n-GaAs substrates utilizing insulating layers formed with dipping and anodic sulfidization methods. The sulfide-insulating layer was obtained...
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