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The shallow trap energy in SONOS charge-trapping flash (CTF) is the fundamental challenge for required good retention, especially at elevated temperatures. Although the high temperature retention can be improved by BE-SONOS, this is traded off the slow erase speed. To address these issues, we have fabricated a new charge-trapping-engineered flash (CTEF) using deep trapping high-dielectric to replace...
At 150degC under a fast 100 mus and low plusmn9 V P/E voltage, the [TaN-Ir3Si]-HfAlO-LaAlO3-Hf0.3O0.5N0.2-HfAlO-SiO2-Si memory device shows good device integrity of a 3.2 V initial DeltaVth and 2.4 V 10-year extrapolated retention. This only 25% retention decay at 150degC was achieved by double quantum barriers confining trapped carriers in deep Hf0.3O0.5N0.2 well.
We have fabricated the [TaN-Ir3Si]-HfAlO-LaAlO3-Hf0.3O0.5N0.2-HfAlO-SiO2-Si double quantum-barrier charge- trapping memory device. Under fast 100 mus and low plusmn8 V program/erase (P/E) condition, an initial memory window of 2.6 V and good extrapolated ten-year retention window of 1.9 V are achieved at 125degC. Very small P/E retention decays of 64/22 mV/dec at 125degC are measured due to double...
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