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Si 1−x Ge x nanocrystals (NCs), embedded in Al 2 O 3 matrix, were fabricated on Si (100) substrates by RF-magnetron sputtering technique with following annealing procedure at 800°C, in nitrogen atmosphere. The presence of Si 1−x Ge x NCs was confirmed by grazing incidence X-ray diffraction (GIXRD), grazing incidence small angle X-ray scattering (GISAXS)...
In this communication we report on the growth and the optical characterisation of CdS quantum dots in the diameter range of 4–10 nm embedded in silicon dioxide glass films grown by magnetron rf-sputtering technique with post-deposition annealing. Optical transmission measurements display a marked blue shift of the absorption band edge due to the quantum confinement of the electrons and holes in the...
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