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Hot carrier effects on RF small-signal parameters in high-k/metal gate nMOSFETs are characterized by DC and RF measurements. To explain the novel hot carrier-induced degradation, we suggest a modified surface channel resistance model that can be applied to both conventional SiO2 and high-k nMOSFETs.
RF performances of 100-nm metal gate/high-k dielectric nMOSFET and parameters degradation by hot carrier injection to apply to RF integrated circuits are investigated. The attained nMOSFETs RF performances are 132-GHz fT and 44-GHz fmax. In addition to RF figures of merit (FOM, fT and fmax), variation of capacitance and resistance is monitored to study hot carrier effects.
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