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Advanced doped‐silicon‐layer‐based passivating contacts have boosted the power conversion efficiency (PCE) of single‐junction crystalline silicon (c‐Si) solar cells to over 26%. However, the inevitable parasitic light absorption of the doped silicon layers impedes further PCE improvement. To this end, alternative passivating contacts based on wide‐bandgap metal compounds (so‐called dopant‐free passivating...
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