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We investigated the properties of flexible InGaN LEDs fabricated on a 2-in. polyimide substrate with various radii of curvature R. The output power of the LEDs slightly increased as R decreased for a given input current. The output power decreased and surface cracks appeared in the curved devices at currents larger than a critical current, although this current was smaller for devices with a smaller...
Numerical simulations are performed to investigate the light-extraction efficiencies (LEEs) of gallium nitride-based light-emitting diodes (LEDs) on patterned sapphire substrates (PSSs), using the three-dimensional finite-difference time-domain method. PSSs with hexagonal arrays of cone-shaped patterns were used, and the pitch of the pattern array, pattern fill factor and pattern height were varied...
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