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Spin crossover behavior in tris(N,N′-dialkyldithiocarbamato) iron(III) complexes with varying alkyl groups has been studied by variable temperature magnetic moment and Mössbauer spectral studies. All the complexes may be divided into three broad groups; high spin (μeff > 4.8 BM), intermediate spin (μeff = 3.5 − 4.6 BM) and low spin (μeff < 3.2 B.M). Room temperature...
Nano size MgxCo1 − xFe2O4 (x = 0, 0.2, 0.4, 0.6, 0.8 and 1.0) ferrites have been prepared using sol gel method and characterized using i.r., TEM, XRD, magnetic and Mössbauer spectral studies. The particle size of as obtained samples was found to be ~6 nm, which increases up to ~80 nm after annealing at 1,000°C. The saturation magnetization decreases from 80.0–27...
Nano size composite of x(NiFe2O4)+(1−x)(SrFe12O19) were prepared using sol gel and aerosol route. The percentage of the components of NiFe2O4 and SrFe12O19 calculated from X-ray diffraction pattern using Rietveld analysis. The hysteresis loop for the as obtained samples exhibits no hysteresis, which may be attributed to super paramagnetic relaxation. The saturation magnetization do not show a significant...
Nano-size particles of Ni0.5Zn0.5Fe2O4 ferrite were prepared through aerosol route. The solutions of iron, nickel and zinc nitrates were mixed in stoichiometric proportion, passed through a pneumatic nebulizer, to get very fine mist (aerosols), and a furnace at ~600°C in air atmosphere. Through various events in succession, metal atoms form ferrite in air. The average particle size was found to be...
This study reports the performance of 23 Electrical Distribution Divisions (EDD's) of an Indian state, Uttarakhand for the period of 2005–2006 using the concepts of Additive Model (AM), Slack Based Modelling (SBM) and Two-stage Data Envelopment Analysis (DEA). Slack Based Modelling helps in quantifying the slacks, which is a hidden source of inefficiency that might be present in BCC efficient DMU's...
With the Moore's law drawing in a saturation limit closer for our current technologies in the semiconductor field, the need for efficient technologies better than the present majorly in terms of energy, speed and storage is growing loud every day. Unexpectedly, the key to this solution comes from the past. Memristor thus became the pioneers for opening of such a possibility. A linear ion drift model...
This paper presents a temperature and supply compensated sub-threshold voltage reference generator which generates a reference voltage of 173 mV at supply voltage of 0.6 V and temperature @ 27 °C, has been designed in 45 nm CMOS technology. Variation of output voltage with temperature over a range of −25 to 85 °C is 172.88 to 173.25 mV which gives temperature coefficient of 19 ppm/°C at supply voltage...
This paper presents the design of Memristor-capacitor based startup circuit. Memristor is a novel device and has many advantages over conventional CMOS devices such as no leakage current and is easy to manufacture. In this work the switching characteristics of memristor is utilized. First the theoretical equations describing the switching behavior of memristor are derived. To prove the switching capabilities...
The communication switching system enables the universal connectivity. The universal connectivity is realized when any entity in one part of the world can communicate with any other entity in another part of the world. In many ways telecommunication will acts as a substitute for the increasingly expensive physical transportation. The telecommunication links and switching were mainly designed for voice...
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