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High reliability, high transmission speed and low power consumption laser diodes are required for optical interconnect. We have developed 1060 nm Vertical Cavity Surface Emitting Lasers (VCSELs) with InGaAs/GaAs strained quantum wells, oxide-confined and double intracavity structures for the requirement. In this paper, an extremely long term aging test close to the actual operating temperature was...
State of the art VCSEL technology will be reviewed in terms of power consumption and reliability in order to realize the energy efficient HPC and Data Centers. Longer wavelength VCSEL seems promising candidate for the upcoming higher performance computes with energy saving.
1060nm VCSELs with InGaAs/GaAs strained quantum wells have been reviewed in terms of power consumption and reliability. Clear eye opening was confirmed at 10Gbps with bias current of as low as 1.4mA.
Extremely low power dissipation of 0.14 mW/Gbps at 10 Gbps operation with as small as 75 mVp-p of modulation amplitude has been achieved in carefully designed InGaAs/GaAs-MQW 1060 nm VCSELs employed double intra-cavity structure.
VCSEL performance will be reviewed. A careful design of cavity structure, as well as precise control in the epitaxial growth enables us to achieve a record power conversion efficiency of 62% in the 1060nm VCSELs.
VCSELs will be reviewed in terms of power conversion efficiency in this talk. In addition, high speed VCSEL and its transmitter modules for parallel optical interconnection will be presented.
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