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A novel chemically, thermally and electrically robust Cu damascene interconnects with an organic non-porous ultralow-k (ULK) dielectric fluorocarbon (k=2.2), deposited by an advanced microwave excited plasma enhanced CVD, is demonstrated. A practical nitrogen plasma treatment (NPT) was employed to minimize chemically damage introduction to fluorocarbon in post-etching cleaning and CMP processes. Also,...
Three-dimensional (3D) chip integration with through-silicon-vias (TSV's) can enable system benefits of enhanced performance, power efficiency, and cost reduction leveraging micro-architecture designs such as 2.5D silicon packages and 3D die stacks. 2.5D silicon packages and 3D die stacks structures integrated in modules each have unique technical challenges but each can provide system benefits including...
A 300-mm wafer-level three-dimensional integration (3DI) process using tungsten (W) through-silicon vias (TSVs) and hybrid Cu/adhesive wafer bonding is demonstrated. The W TSVs have fine pitch (5 mum), small critical dimension (1.5 mum), and high aspect ratio (17:1). A hybrid Cu/adhesive bonding approach, also called transfer-join (TJ) method, is used to interconnect the TSVs to a Cu BEOL in a bottom...
(Ba, Sr)TiO3 (BST) ceramic thin films have attained a presence in small-signal microelectronics applications due to their "dual-high" characteristics (high dielectric constant and high breakdown strength), which are essential in producing high energy density capacitors. In this paper we investigate the potential application of BST films to high voltage, high energy density capacitors in...
It is well known that the signal due to self-heating during read-out of uncooled microbolometers is much larger than that created by incident infrared (IR) radiation to be detected. This results in a degradation of the performance by requiring a large dynamic range of the preamplifier to be allocated for the signal due to self-heating. In this paper, we have studied self-heating during the read-out...
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