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We have studied the defects introduced in n-type Ge during electron beam deposition (EBD) and sputter deposition (SD) by deep-level transient spectroscopy (DLTS) and evaluated their influence on the rectification quality of Schottky contacts by current–voltage (I–V) measurements. I–V measurements demonstrated that the quality of sputter-deposited diodes are poorer than those of diodes formed by EBD...
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