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GaN/AlN two-layer films with different thickness are synthesized on Si substrates by pulsed laser deposition (PLD). GaN and AlN single-layer films are also synthesized for comparison. It is found that the turn-on field of the GaN/AlN two-layer films are considerably decreased 2 orders of magnitude than that of single-layer films. The improvement of FE characteristics an attributed to the quantum structure...
Large-grain polycrystalline silicon (poly-Si) films were prepared on foreign substrates by the epitaxial thickening of seed layers. The seed layers were formed by aluminum-induced crystallization (AIC). Large-grain n-i-p poly-Si solar cells were deposited on epitaxial seeds by hot-wire chemical vapor deposition (HWCVD). Highly (93%) crystalline fractions with a lateral grain size of 5 ??m and an intrinsic...
We review our recent advances in the lateral ordering, position, and number control of self-organized epitaxial semiconductor quantum dots based on self-organized anisotropic strain engineering, growth on patterned substrates, and selective area growth.
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