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ZnMn2O4 active layer for resistance random access memory (RRAM) was deposited on p+-Si substrate by chemical solution deposition. The bipolar resistive switching behaviours of the Ag/ZnMn2O4/p+-Si capacitor are investigated. The bipolar resistive switching is reproducible and shows high ON/OFF ratio of > 102 and long retention times of > 105 s. The conduction mechanism of the Ag/ZnMn2O4/p+-Si...
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