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ZnMn2O4 thin films were deposited by a sol-gel technique onto a p+-Si substrate, and a RRAM device with the Ag/ZnMn2O4/p+-Si structure was fabricated. The microstructure of ZnMn2O4 films and the resistive switching behavior of Ag/ZnMn2O4/p+-Si device were investigated. ZnMn2O4 thin films had a spinel structure after annealing at 650 °C for 1 h. The Ag/ZnMn2O4/p+-Si device showed unipolar and/or bipolar...
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