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Although 2D molybdenum disulfide (MoS2) has gained much attention due to its unique electrical and optical properties, the limited electrical contact to 2D semiconductors still impedes the realization of high‐performance 2D MoS2‐based devices. In this regard, many studies have been conducted to improve the carrier‐injection properties by inserting functional paths, such as graphene or hexagonal boron...
A simple contact‐engineering method, which introduces chemically adsorbed thiol‐molecules as thin tunneling barriers between the metal electrodes and MoS2 channels, is proposed by Seungjun Chung, Takhee Lee, and co‐workers in article number 1705540. The selectively deposited thiol‐molecules provide additional tunneling paths at the contact regions, improving the carrier injection with lower activation...
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