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A novel three-dimensional device structure for a carbon nanotube (CNT) fin field-effect transistor (FinFET) is proposed and evaluated. We evaluated the potential of the CNT FinFET compared with a Si FinFET at a 22-nm node at the circuit level using three performance metrics including propagation delay, total power dissipation, and energy-delay product (EDP). Compared with a Si FinFET, the CNT FinFET...
Realizing low contact resistance between graphene and metal electrodes remains a well-known challenge for building high-performance graphene devices. In this work, we attempt to reduce the contact resistance in graphene transistors and further explore the resistance limit between graphene and metal contacts. The Pd/graphene contact resistance at room temperature is reduced below the 100 Ω·μm level...
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