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In this work, we present SCAPS-1D simulations of Cu(In,Ga)Se2-based dual-junction tandem cells. The purpose of this work is to assess the device performances of the Cu(In,Ga)Se2-based tandem cells based on the fact that each subcell is simulated to yield a reported best efficiency at its bandgap. A method to build the J-V characteristics of tandem cells from individual J-V curves of subcells is also...
In this work, we present SCAPS-1D simulations of dual-junction tandem cells with chalcopyrite top subcells with various bandgaps (Eg=1.4, 1.5, 1.6, and 1.7eV) and a c-Si bottom subcell. The purpose of these simulations is to assess achievable device performances with a CIGS/c-Si tandem structure when a realistic efficiency of each subcell is applied. The top subcell conditions are simulated based...
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