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Radiofrequency (13.56MHz) plasma enhanced chemical vapor deposition process is used for deposition of SiO x films on bell metal substrates using Ar/hexamethyldisiloxane/O 2 glow discharge. The DC self-bias voltage developed on the substrates is observed to be varied from −35V to −115V depending on the RF power applied to the plasma. Plasma potential measurements during film deposition...
Hexamethyldisiloxane (HMDSO) films have been deposited on bell metal using radiofrequency plasma assisted chemical vapor deposition (RF-PACVD) technique. The protective performances of the HMDSO films and their water repellency have been investigated as a function of DC self-bias voltage on the substrates during deposition. Plasma potential measurements during film deposition process are carried out...
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