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Nanocrystalline TiN thin films were deposited on (100) silicon wafers using an unbalanced magnetron (UBM) sputtering system. The structure and properties of the TiN thin films were studied under single-variable experimental condition by varying nitrogen flow rate ranging from 0.25 to 1.75 sccm. The grain size of the films was determined by X-ray diffraction (XRD), and the size was less than 7 nm....
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