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In this work we present a theoretical study of the quantization in a p-type FD/SOI device with confinement in the main crystalline directions. To carry out this study, we solved the Schrödinger effective mass equation, taking into consideration non-parabolicity, warping and degeneracy of the silicon valence band. We investigated the relative populations of the lowest subbands, and proposed a set of...
A new approach to calculate the subthreshold swing of short channel bulk and silicon-on-insulator metal oxide semiconductor field effect transistors is presented. The procedure utilizes a channel-potential expression appropriate for submicron dimensions. The final result is similar to that used for long channels except for a factor λ which represents the short channel effects. Comparison with different...
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