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In this study, we simulate double-gate MOSFET using a 2-D direct Boltzmann transport equation solver. Simulation results are interpreted by quasi-ballistic theory. It is found that the relation between average carrier velocity at virtual source and back-scattering coefficient needs to be modified due to the oversimplified approximations of the original model. A 1-D potential profile model also needs...
The lattice scattering is carefully involved in a direct solution of the BTE and Poisson-Schrodinger equation method. Simulating results of a 9 nm DG MOSFET shows the lattice scattering effects on the barrier height and the positions of barrier peak are small, but the effects on the carrier drift velocity are strongly. Not only intra-valley scatterings but also the inter-valley scatterings affect...
We present a self-consistent multi subband deterministic solver of the Boltzmann transport equation of the two dimensional (2D) electron gas. The Schodinger equation at each slice in the confinement direction and the two dimensional Poisson equation are self-consistently solved with the Boltzmann transport equation. The energy quantization and the scattering of the 2D electron gas are included. We...
Effect of surface roughness on quasi-ballistic transport in nano-scale Ge and Si double-gate (DG) MOSFETs are investigated using 2D full-band self-consistent ensemble Monte Carlo (MC) method based on solving quantum Boltzmann equation (QBE). Results show that the effect of the surface roughness on carrier quasi-ballistic transport in DG nMOSFETs is still significant even when the gate length scales...
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