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Specific HEMTs (High Electron Mobility Transistors) with different gate geometries have been realized on the same AlGaAs/GaAs heterojunction. Under the same operating conditions with a power consumption of 30 μW, experimental results at 4.2 K and low frequency range show that the input voltage noise is almost inversely proportional to the square root of the input capacitance: a noise value as low...
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