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We report on Terahertz wireless communications and fast imaging experiments at 300 GHz, using nanometer-sized transistors as detectors. The physical mechanism of the detection is related to the overdamped plasma waves in the transistor channel.
By means of a numerical hydrodynamic model, we investigate the influence of collective plasma modes in a field-effect transistor channel under different excitation and biasing conditions. Firstly, we study the case of a device externally-excited by a harmonic optical beating or an electronic excitation and current-driven operation at the drain. The harmonic and continuous responses of the drain-source...
We propose a method for the heterodyne detection of terahertz (THz) signals. The nonlinear element is constituted by the channel of an High Electron Mobility Transistor (HEMT), while the optical beating of two laser beams exciting plasma waves in the transistor channel plays the role of the THz local oscillator. We numerically show, through an hydrodynamic modelling, the efficiency of such a mixer.
Measurements of terahertz resonant emission due to the excitation of plasma waves by an optical beating inside AlGaAs/InGaAs/InP high electron mobility transistors are reported at 300 K and 200 K.
We present technological bricks and concepts under study which could permit build up of future THz remote sensing systems. Critical issues regarding such systems mainly rely on the availability of sensitive and compact detectors together with powerful and versatile sources. Potential use of plasma waves in nano-transistor is presented which can be exploited for the realization of an efficient mixer...
A photomixed laser beam of two 1.55 mum continuous-wave lasers is used for interband photoexcitation in submicron gate length InAlAs/InGaAs transistors. Results show the clear excitation of plasma oscillation modes in the transistor channel. A strong amplification of the optical beating detection in the 0-600 GHz range is observed as a function of drain-source voltage. Numerical results, using hydrodynamic...
This paper presents the recent, experimental studies on the plasma resonant detection in high electron mobility transistors (HEMTs). Experiments were performed using an AlGaAs/lnGaAs/lnP HEMT with gate-length Lg = 800 nm. The whole HEMT structure is transparent to the incident radiation excepted the InGaAs-channel where the interband photoexcitation occurs. By using a tunable optical beating this...
The authors report on tunable terahertz resonant detection of two 1.55 mum cw-lasers beating by plasma waves in AlGaAs/InGaAs/InP high-electron-mobility transistor. The fundamental plasma resonant frequency and its odd harmonics can be tuned with the applied gate-voltage in the range 0-600 GHz. Amplification of photoresponse under applied DC drain-source current is demonstrated.
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