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An n-Mg0.2Zn0.8O/n-ZnO/SiOx (x < 2) heterostructure has been fabricated on n-Si by sputtering and electron-beam evaporation. The device showed nonrectifying behavior, and emitted strong white light under reverse bias with positive voltages applied to n-Si. The white-light electroluminescence (EL) is believed to result from electron–hole recombination at defect levels of ZnO. The EL mechanism...
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