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Non-stoichiometric silicon nitride films with different excess Si concentrations were deposited by plasma-enhanced chemical vapor deposition (PECVD) under different NH3/SiH4 gas flow ratios. Room-temperature electroluminescence (EL) was observed from the films. And the peak of EL spectra remains at 600 nm, irrespective of the increase of the Si concentrations. It was found that at high electric fields...
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