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The room-temperature electroluminescence (EL) band in the 1.2–1.7 μm range in boron-implanted silicon with implantation energy of 50 keV and 700 keV was investigated. This band is attributed to the defects in the implantation region introduced by implanted ions. The defects are unstable under the annealing temperature as low as 350°C. The EL intensity of the device implanted at 700 keV is much stronger...
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