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Indium phosphide thin films were deposited on sapphire and GaAs(100) substrates by pulsed laser deposition using a XeCl excimer laser in argon background gas and in high vacuum. The grown film structure and morphology were observed by reflection high-energy electron diffraction, scanning electron microscopy, and atomic force microscopy. The films were grown on sapphire were found to be disordered...
Indium phosphide thin films were deposited on sapphire and GaAs(100) substrates by pulsed laser deposition using a XeCl excimer laser in argon background gas and in high vacuum. The grown film structure and morphology were observed by reflection high-energy electron diffraction, scanning electron microscopy, and atomic force microscopy. The films were grown on sapphire produced a reflection electron...
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