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Material properties modification by high energy heavy ion implantation is a prospective technology leading to many device fabrications. This technique induces defects and hence the physical properties of the materials are modified. The effects of swift heavy ion implantation induced defects by 120 MeV 28+ Si ion implantation and doping in SI-GaAs are presented from the electron momentum distribution...
Electron momentum distribution (EMD) on trans-stilbene single crystal projected along [101] direction has been studied by using positron two dimensional -angular correlation of annihilation radiation (2D-ACAR). The projected EMD is explained with respect to the molecular arrangement in the plane. The EMD features reflected the delocalized electronic states in [101] direction. The results of EMD mapping...
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