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The etching effects on the surface and electrical characteristics of high Al mole fraction Al x Ga 1−x N (x=0.65) have been characterized by X-ray photoelectron spectroscopy (XPS) and transfer length method (TLM) as a function of radio frequency power. XPS results show that the Ga–N and Al–N peaks move to the lower energy after ICP etchings. An increase in the amount of oxygen and...
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