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Interface state density and channel mobility have been characterized for 4H-SiC MOSFETs fabricated with dry thermal oxides and subsequently passivated with nitric oxide. The interface trap density at 0.1eV below the conduction band edge decreases from approximately 8×10 12 to 1×1012eV−1cm−2 following anneals in nitric oxide (NO) at 1175°C for 2h. The room temperature field effect channel mobility...
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