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We demonstrate the control of coherent acoustic phonon generation by applying voltage across InGaN/GaN multiple-quantum-wells light emitting diodes (LEDs). The acoustic phonons oscillation can be switched off by increasing the reverse bias up to -25 V.
Patterning the dicing streets technology was used to define the high extraction efficiency region of InGaN-GaN multiple-quantum-well light-emitting diodes (LEDs). The external quantum efficiency (EQE) of the LEDs at 20 mA increased by 12.9% because of the roughening of the passive region which enhanced the escape cone.
By generating coherent nano acoustic waves in InGaN/GaN multiple-quantum-wells and analyzing their echo signals from the sample-air interface, we studied the propagation and reflection properties of the THz acoustic strain waves in GaN
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