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Antimonide-based heterostructural p-channel HFET epitaxies consisting of an In0.44Ga0.56Sb quantum well located between AlSb barriers were developed by molecular beam epitaxy. The In0.44Ga0.56Sb channel layer was compressively strained to enhance hole mobility. Room-temperature Hall measurements to the as-grown materials exhibited a hole mobility as high as 895 cm2/V s. Ti/Pt/Au and Pt/Ti/Pt/Au metals...
Small-bandgap InAs channel materials are potential candidates for high-speed and low-power applications and have been demonstrated in AlSb/InAs/AlSb QWFETs. Taking advantage of their excellent transport properties, we successfully develop an InAs-channel metal-oxide-semiconductor modulation-doped field-effect transistor (MOS-MODFET) using 100-nm PECVD-deposited SiO2 dielectrics for gate dielectrics...
In this work, N+-InGaAs/InAlAs recessed gates for InAs/AlSb HFET development are presented. Highly doped N+-InGaAs cap layers are used to decrease the parasitic resistances in contact and access regions. As-grown modulation-doped epitaxy materials exhibit a Hall mobility of 14,200 cm2/V s and a sheet density of 6.15 ×1012 cm-2, while a mobility of 14,600 cm2/V s and a sheet density of 5.61 × 1012...
Epitaxial AlN films have been grown on GaN/sapphire using helicon sputtering at 300/spl deg/C. The surface acoustic wave (SAW) filters fabricated on AlN/GaN/sapphire exhibit more superior characteristics than those made on GaN/sapphire. This composite structure of AlN on GaN may bring about the development of high-frequency components, which integrate and use their semiconducting, optoelectronic,...
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