The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Small-bandgap InAs channel materials are potential candidates for high-speed and low-power applications and have been demonstrated in AlSb/InAs/AlSb QWFETs. Taking advantage of their excellent transport properties, we successfully develop an InAs-channel metal-oxide-semiconductor modulation-doped field-effect transistor (MOS-MODFET) using 100-nm PECVD-deposited SiO2 dielectrics for gate dielectrics...
We successfully demonstrated DC and RF performance of a metal-oxide-HEMT based on baseline InAs/AlSb HEMT epitaxy material. E-beam evaporated Al1-xOx was chosen for the dielectric film and its composition characterized by EDS. In a device with 2.0 mum gate length, maximum drain current is 286 mA/mm and peak transconductance is 495 mS/mm at drain voltage of 0.4 V. Microwave performance shows a fT of...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.