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A maskless wet-etching method is used to prepare patterned sapphire substrates for enhancing the output power of InGaN light-emitting diodes (LEDs). Blue LEDs grown on the patterned sapphire substrates exhibit an output power of 24.9 mW, which is 19.4% higher than that of the devices grown on flat substrates. The uniformity of the optical and electrical properties of LEDs across a 2-in wafer is slightly...
Wet-etched pattern sapphire substrates (PSS) with stripes along the <11-20>sapphire direction are fabricated and investigated. Dislocation reduction and light extraction enhancement are observed for the material grown these substrates. 400 nm UV LEDs with output power enhancement as much as 87% have been demonstrated on the substrate with a 0.9 mum etching depth. The enhancement of output power...
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