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Stressed C–V measurement was used to extract the trap profiles in AlGaN/GaN HFETs with field plates enduring high‐voltage off‐state stress. The C–V measurement results also correlated with the degradation in dynamic on‐resistance (RDS,on) after transistors were stressed with similar stress conditions. Based on the correlation between the trap profiles and dynamic RDS,on degradation, the location with...
AlN, an important semiconductor with the widest band gap among III‐nitrides, was employed to construct solar blind metal–semiconductor–metal photodetectors (MSM‐PDs). MSM‐PDs were fabricated on AlN epitaxial thin films deposited on GaN/sapphire using a helicon sputtering system at a low temperature of 300 °C. The dark current of the device is as low as 200 fA at 20 V and the photocurrent illuminated...
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