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This paper presents a low-power (LP) and low-voltage (LV) ultra-wideband (UWB) low-noise amplifier (LNA) using source degeneration topology. A biasing metric for LV and LP is designed in deep-submicrometer CMOS technologies. Using this biasing metric with source degeneration and current reused technique LNA is analyzed for a low voltage 0.65V, low power of 0.80-mW. Measurement results show 11.942...
This paper proposed an UWB LNA using 0.18μm CMOS technology with a wideband input matching circuit. The cascode structure and source degeneration are adopted to achieve low noise figure and high gain characteristics. Input reflection coefficient and reverse isolation are optimized in UWB band through parametric analysis. The proposed LNA achieves a high gain of 22.082dB at 5.059GHz and minimum noise...
This paper presents the UWB LNA using 0.18µm CMOS technology. The proposed circuit is simulated for the frequency range of 3.1GHz to 10.6GHz. By applying the resistive feedback topology, the noise figure of the circuit can be improved. The source degeneration technique helps in balancing the effect of parasitic capacitance. The proposed circuit has the cascade and cascode connections of the transistors...
The paper presents a low noise amplifier (LNA) for ultra-wideband (UWB) frequency range from 3.1 GHz to 10.6 GHz using two stage cascade topology with three section band pass Chebyshev filter. Proposed LNA achieves a maximum gain of 20 dB, a minimum noise figure (NF) of 2.89 dB and IIP3 of 10 dBm with a wide input matching. The power consumption is 12 mW under a 1.8-V DC power supply. The proposed...
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