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Submonolayer and supermonolayer quantum wells (QWs) of GaAs/InAs/GaAs structure were successively grown at 500°C by molecular beam epitaxy and the thickness of QWs was controlled by referring the growth time of a preliminary grown layer having the critical thickness (1.85 ML). The peak energy of the photoluminescence of QWs coincides well with the calculated results carried out under the assumption...
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