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TiO 2 films are deposited by direct current reactive magnetron sputtering with radio frequency substrate bias. Plasma ions are accelerated towards the substrate due to the negative self bias developed at the substrate. X-ray diffraction pattern reveals that the films deposited at the floating potential (−35V) of the substrate are amorphous, and broad, low intensity rutile peaks of TiO ...
Radiofrequency (13.56MHz) plasma enhanced chemical vapor deposition process is used for deposition of SiO x films on bell metal substrates using Ar/hexamethyldisiloxane/O 2 glow discharge. The DC self-bias voltage developed on the substrates is observed to be varied from −35V to −115V depending on the RF power applied to the plasma. Plasma potential measurements during film deposition...
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