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Atomic layer deposition (ALD) of thin films from TiCl 4 and O 3 on Si(100) substrates was investigated. The growth of TiO 2 was obtained at substrate temperatures of 225–600°C from these hydrogen-free precursors. Formation of anatase phase in the films was observed at 250–600°C. In addition, the rutile phase was revealed in thicker films deposited at 600°C. Compared to the...
A strong influence of growth temperature on the deposition rate and refractive index of TiO 2 thin films, grown by atomic layer deposition from TiCl 4 and H 2 O, was observed. The growth rate increased from 0.05 to 0.09nm per cycle while the refractive index decreased from 2.63 to 2.00 with the increase of growth temperature from 150 o C to 225 o C. The effect...
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