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Continuous process-level and system-level innovation has driven Moore's Law scaling for the last fifty years, and will continue to do so in the next decades. In the last two decades, there has been an acceleration of new materials and devices into semiconductor manufacturing, such as low-k, strained Si, high-k, and FinFET [1–4], in order to continue process and cost scaling. At the same time, ever...
The feasibility of a fully integrated RF front-end using an above-IC BAW integration technique is demonstrated for WCDMA applications. The circuit has a voltage gain of 31.3dB, a noise figure of 5.3dB, an in-band IIP3 of -8dBm and IIP2 of 38dBm, with a total power consumption of 36mW. The BAW filter area is 0.45mm/sup 2/ and the total circuit area including the BAW filter is 2.44mm/sup 2/.
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