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In this paper, a new SRAM cell design based on carbon nanotube field-effect transistor (CNFET) technology is proposed. Carbon nanotube with their superior transport properties, excellent thermal conductivities, and high current handling capacities has proved to be a promising alternative device to the conventional CMOS. The proposed SRAM cell design on CNFET is compared with SRAM cell designs implemented...
In this paper, new SRAM cell design methods for FinFET technology are proposed. One of the most important features of FinFET is that the independent front and back gate can be biased differently to control the current and the device threshold voltage. By controlling the back gate of FinFET, SRAM cell can be designed for minimum power consumption. This paper proposes a new 8T (8 transistors) SRAM structure...
This paper proposes new methods for SRAM cell design in FinFET technology. One of the most important features of FinFET is that the independent front and back gates can be biased differently to control the current and the device threshold voltage. By controlling the back gate voltage of a FinFET, a SRAM cell can be designed for low power consumption. This paper proposes a new 8T (8 transistors) SRAM...
In this paper, a new technique is presented for low power high-speed dynamic circuits design using double gate FinFET. In this technique, the clock signal is used to control the threshold voltage of the front gate; the threshold voltage of the front gate is reduced during the evaluation phase for a fast transition and increased during the pre-charge or standby phase to reduce the leakage current (this...
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