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A 24/35-GHz BiCMOS concurrent dual-band low-noise amplifier (DBLNA) has been developed. The proposed concurrent DBLNA was designed using new active notch filters embedded into a wideband LNA. The concurrent DBLNA has measured peak gains of 21.9/16.6 dB at 23.5/35.7 GHz, respectively. The measured 3-dB bandwidths of the low and high pass-bands are 7.7 GHz (18.8–26.5 GHz) and 8.8 GHz (32.8–41.6 GHz),...
A new concurrent tri-band LNA (TBLNA) operating around 13/24/35 GHz has been designed using a novel tri-band load for stable and high stop-band rejection. The tri-band load is composed of two passive LC notch filters with feedback. The TBLNA fabricated on a 0.18-μm SiGe BiCMOS process achieves power gain of 22.3/24.6/22.2 dB at 13.5/24.5/34.5 GHz, respectively. It has the best noise figure of 3.7/3...
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