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The recombination parameters of aluminium–oxygen complexes in silicon have been reassessed by applying lifetime spectroscopy on several n‐ and p‐type intentionally Al‐contaminated and control samples, using a single‐level defect model. The presence of the control samples has allowed greater accuracy for the extraction of the recombination lifetime. The uncertainty ranges of the parameters have been...
The defect parameters of isolated Cri and chromium-boron (CrB) pairs are reassessed by conducting lifetime spectroscopy on both n- and p-type, Cr-doped silicon samples with different doping levels, and fitting the lifetimes with the Shockley-Read-Hall (SRH) model. The uncertainty ranges of the parameters are significantly tightened through a combined analysis of the two defects with the lifetime data...
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