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InGaN LEDs on sapphire substrates were simulated using ISE TCAD software. In order to obtain a high output power, 15 pairs of GaN (50 nm)/Al0.27Ga0.73N (52 nm) DBR were introduced between the i-GaN and n-GaN layers. The weak output power resulting from our simulation may be related to the inhomogeneous holes distribution in the quantum wells. Also the piezoelectric field due to strains which determines...
The performance of GaN/AlGaN quantum well was simulated using ATLAS software (Silvaco International Inc.). In this work, we simulated a quantum well active region of GaN with AlGaN cladding layers. Here, we studied the changes in radiative efficiency with the thickness of the active layer from 3 nm to 90 nm and found that the radiative efficiency increases when the thickness of the active layer was...
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