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Arrays of InAs quantum dots (QDs) have been studied using in situ scanning tunneling microscopy (STM) during their growth by molecular beam epitaxy on GaAs(001). At a substrate temperature of 400 o C under As 4 flux, both the QDs and the underlying step-terrace structure of the wetting layer (WL) are found to be static, with neither step-flow nor QD ripening observed. Higher resolution...
The effects of in situ sulphur passivation on the electronic properties of n-type InAs(001) have been studied using X-ray photoemission spectroscopy and high resolution electron energy loss spectroscopy coupled with space-charge layer calculations. Surfaces passivated by sulphur dosing followed by arsenic capping were annealed in vacuum to progressively remove the protective layers. For disordered...
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